t4 - lds - 0246, rev . 1 (1 20180 ) ?201 2 microsemi corporation page 1 of 5 1n533 3 b thru 1n5388b available silicon 5 watt zener diodes description the 1n533 3b through 1n 5388b jedec registered series of axial - leaded 5.0 watt zeners provides a selection from 3. 3 to 200 volts with different tolerances as identified by specific suffix letter on the part number. these plastic encapsulated zeners have a moisture classification of level 1 with no dry pack required. they may be operated at high maximum dc currents with adequate heat sinking due to their comparatively low thermal resistance design. microsemi also offers numerous other zener products to meet higher and low er power applications. t- 18 package also available in : g- bend p ackage (surfa ce mount) smbj533 3 C smbj5388 gull wing p ackage (surface mount) smb g533 3 C smbg5388 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n5 33 3 thru 1n5388 series . ? zener voltage available 3. 3 v to 200 v. ? p lus/minus 10%, 5% and 2% voltage tolerances are available . (see part nomenclature block .) ? rohs compliant versions available . applications / benefits ? regulates voltage over broad operating current and temperature range s. ? wide selection from 3. 3 to 200 v . ? flexible axial - lead mounting terminals . ? non - sensitive to esd per mil - s td - 750 m ethod 1020 . ? withstands high surge stresses . ? minimal changes of voltage versus current . ? high specified maximum current (i zm ) with adequate heat s inking . ? moisture classificat ion is level 1 per ipc/jedec j - std - 020b with no dry pack required . m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +150 o c thermal resistance junction - to - lead (1) r ? jl 25 o c /w thermal r esistance junction - to - ambient (2) r ? ja 85 o c /w off - state power dissipation @ 25 o c (3) p d 5.0 w for w ard voltage @ 1.0 a v f 1.2 v sold e r temperature @ 10 s t sp 260 o c notes : 1. a t 3/8 (10 mm) lead length from body . 2. w hen m ounted on fr4 pc board (1oz cu) with 4 mm 2 copper pads and track width 1 mm, length 25 mm . 3. 5 watts at t l < 25 o c 3/8 inch (10 mm) from body, or 1.47 watts at t a = 25 o c when mounted on fr4 pc described for thermal resistance (also see fi gure 1 ). downloaded from: http:///
t4 - lds - 0246, rev . 1 (1 20180 ) ?201 2 microsemi corporation page 2 of 5 1n533 3 b thru 1n5388b mechanical and packaging ? case: void - free transfer molded thermosetting epoxy body meeting ul94v - 0. ? terminal s: tin -l ead or rohs c ompliant annealed matte -t in plating solderable per mil - std - 750, method 2026 . ? marking: part number. ? polarity: cathode indicated by band. diode to be operated with the banded end positive with respect to the opposite end. ? tape & reel option: standard per eia - 296 (add tr suffix to part number). consult factory for quantities. ? w eight: 0.7 grams . ? see p ackage d imensions on last page. part nomenclature 1n5334 b (e3) jedec type number ( see electrical characteristic s t able ) rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant zener voltage tolerance a = +/ - 10% b = +/ - 5% c = +/ - 2% symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified volt age and temperature. i z , i zt , i zk regulator current: the dc regulator current (i z ), at a specified test point (i zt ), near breakdown knee (i zk ). i zm maximum regulator (zener) current: the maximum rated dc current for the specified power rati ng. i zs m maximum zener surge current: the non - repetitive peak value of z ener surge current at a specified wave form. v r reverse voltage: the reverse voltage dc value, no alternating component. v z zener voltage: the z ener voltage the device will exhibit at a specified current (i z ) in its breakdown region. z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively. downloaded from: http:///
t4 - lds - 0246, rev . 1 (1 20180 ) ?201 2 microsemi corporation page 3 of 5 1n533 3 b thru 1n5388b electri cal characteristics @ 25 o c type number reg ul at or voltage (v z ) test current (i zt ) maximum dynamic impedance (z z ) (a & b s uffix only ) maximum reverse current (i r ) i r test voltage (v r ) (a s uffix only ) i r test voltage (v r ) (b & c s uffix only ) maximum reg ul a tor current (i zm ) (b & c s uffix only ) maximum dynamic knee impedance z zk @ 1.0 ma m axim um surge current (i zsm ) v ma o hms a v v ma o hms a mps 1n5333b 1n5334b 1n5335b 1n5336b 1n5337b 3.3 3.6 3.9 4.3 4.7 380 350 320 290 260 3.0 2.5 2.0 2.0 2.0 300 150 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1440 1320 1220 1100 1010 400 500 500 500 450 20 18.7 17.6 16.4 15.3 1n5338b 1n5339b 1n5340b 1n5341b 1n5342b 5.1 5.6 6.0 6.2 6.8 240 220 200 200 175 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10 1.0 2.0 3.0 3.0 4.9 1.0 2.0 3.0 3.0 5.2 930 865 790 765 700 400 400 300 200 200 14.4 13.4 12.7 12.4 11.5 1n5343b 1n5344b 1n5345b 1n5346b 1n5347b 7.5 8.2 8.7 9.1 10 175 150 150 150 125 1.5 1.5 2.0 2.0 2.0 10 10 10 7.5 5.0 5.4 5.9 6.25 6.6 7.2 5.7 6.2 6.6 6.9 7.6 630 580 545 520 475 200 200 200 150 125 10.7 10 9.5 9.2 8.6 1n5348b 1n5349b 1n5350b 1n5351b 1n5352b 11 12 13 14 15 125 100 100 100 75 2.5 2.5 2.5 2.5 2.5 5.0 2.0 1.0 1.0 1.0 8.0 8.6 9.4 10.1 10.8 8.4 9.1 9.9 10.6 11.5 430 395 365 340 315 125 125 100 75 75 8.0 7.5 7.0 6.7 6.3 1n5353b 1n5354b 1n5355b 1n5356b 1n5357b 16 17 18 19 20 75 70 65 65 65 2.5 2.5 2.5 3.0 3.0 1.0 0.5 0.5 0.5 0.5 11.5 12.2 13 13.7 14.4 12.2 12.9 13.7 14.4 15.2 295 280 264 250 237 75 75 75 75 75 6.0 5.8 5.5 5.3 5.1 1n5358b 1n5359b 1n5360b 1n5361b 1n5362b 22 24 25 27 28 50 50 50 50 50 3.5 3.5 4.0 5.0 6.0 0.5 0.5 0.5 0.5 0.5 15.8 17.3 18 19.4 20.1 16.7 18.2 19 20.6 21.2 216 198 190 176 170 75 100 110 120 130 4.7 4.4 4.3 4.1 3.9 1n5363b 1n5364b 1n5365b 1n5366b 1n5367b 30 33 36 39 43 40 40 30 30 30 8. 0 10 11 14 20 0.5 0.5 0.5 0.5 0.5 21.6 23.8 25.9 28.1 31 22.8 25.1 27.4 29.7 32.7 158 144 132 122 110 140 150 160 170 190 3.7 3.5 3.3 3.1 2.8 1n5368b 1n5369b 1n5370b 1n5371b 1n5372b 47 51 56 60 62 25 25 20 20 20 25 27 35 40 42 0.5 0.5 0.5 0.5 0.5 33.8 36. 7 40.3 43 44.6 35.8 38.8 42.6 45.5 47.1 100 93 86 79 76 210 230 280 350 400 2.7 2.5 2.3 2.2 2.1 1n5373b 1n5374b 1n5375b 1n5376b 1n5377b 68 75 82 87 91 20 20 15 15 15 44 45 65 75 75 0.5 0.5 0.5 0.5 0.5 49 54 59 63 65.5 51.7 56 62.2 66 69.2 70 63 58 54.5 52 .5 500 620 720 760 760 2.0 1.9 1.8 1.7 1.6 1n5378b 1n5379b 1n5380b 1n5381b 1n5382b 100 110 120 130 140 12 12 10 10 8.0 90 125 170 190 230 0.5 0.5 0.5 0.5 0.5 72 79.2 86.4 93.6 101 76 83.6 91.2 98.8 106 47.5 43 39.5 36.6 34 800 1000 1150 1250 1500 1.5 1.4 1.3 1.2 1.2 1n5383b 1n5384b 1n5385b 1n5386b 1n5387b 1n5388b 150 160 170 180 190 200 8.0 8.0 8.0 5.0 5.0 5.0 330 350 380 430 450 480 0.5 0.5 0.5 0.5 0.5 0.5 108 115 122 130 137 144 114 122 129 137 144 152 31.6 29.4 28 26.4 25 23.6 1500 1650 1750 1750 1850 1850 1.1 1.1 1.0 1.0 0.9 0.9 jedec registered data. note 1: zener voltage (vz) is measured at t l = 25 o c (+8, -2 o c) . voltage measurement performed at 40 10 milliseconds after application of dc current. note 2: the z ener impedance is derived from 1 khz ac voltage resulting from an ac current modulation having an rms va lue equal to 10% of the dc z ener current (i zt or i zk ) superimposed on i zt or i zk . see micronote 202 for z ener impedance variation with different operating currents. note 3: the maximum current (i zm ) s ho wn is for a 5% tolerance devices. the i zm for other tolerances can be calculated using the formula: i zm = p/v zm where v zm is the v z at the high end of the voltage tolerance specified and p is the rated power for the method of mounting. note 4: the surge current (i zsm ) is specified as the maximum peak of a non - rec urrent half - sine wave of 8.3 ms duration. downloaded from: http:///
t4 - lds - 0246, rev . 1 (1 20180 ) ?201 2 microsemi corporation page 4 of 5 1n533 3 b thru 1n5388b graphs t l , lead temperature ( o c ) 3/8 from body. or v r (volts) t a ambient temperature on fr4 pc board figure 2 figure 1 typical capacitance vs. power derating curve reverse voltage for 5 watt zeners v r (volts) figure 3 typical capacitance vs. reverse voltage for 5 watt zeners pd, maximum power dissipation (watts) t l t a on fr4 pc board capacitance (pf) capacitance (pf) downloaded from: http:///
t4 - lds - 0246, rev . 1 (1 20180 ) ?201 2 microsemi corporation page 5 of 5 1n533 3 b thru 1n5388b package dimensions notes: cathode indicated by band. dimensions dim inches millimeters min max min max ll 1.00 25.4 bl 0.330 0.350 8.39 8.89 bd 0.130 0.145 3.31 3.68 ld 0.038 0.042 0.97 1.06 downloaded from: http:///
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